The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Aug. 09, 2011
Masaki Koyama, Nukata-gun, JP;
Yasushi Ookura, Okazaki, JP;
Akitaka Soeno, Toyota, JP;
Tatsuji Nagaoka, Aichi-gun, JP;
Takahide Sugiyama, Aichi-gun, JP;
Sachiko Aoi, Nagoya, JP;
Hiroko Iguchi, Aichi-gun, JP;
Masaki Koyama, Nukata-gun, JP;
Yasushi Ookura, Okazaki, JP;
Akitaka Soeno, Toyota, JP;
Tatsuji Nagaoka, Aichi-gun, JP;
Takahide Sugiyama, Aichi-gun, JP;
Sachiko Aoi, Nagoya, JP;
Hiroko Iguchi, Aichi-gun, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.