The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
May. 25, 2012
Applicants:
Hyung-soo Kim, Yongin, KR;
In-ho Choi, Yongin, KR;
Inventors:
Hyung-Soo Kim, Yongin, KR;
In-Ho Choi, Yongin, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/12 (2013.01); H01L 27/1214 (2013.01); H01L 29/4908 (2013.01); H01L 29/66765 (2013.01); H01L 29/78621 (2013.01); H01L 29/66757 (2013.01); G02F 1/136227 (2013.01);
Abstract
A method of manufacturing a display device including an electrostatic discharge protection circuit, the method including: forming an amorphous silicon layer on a substrate; crystallizing a partial region of the amorphous silicon layer into a polycrystalline silicon layer; and forming at least one transistor on the amorphous silicon layer that was not crystallized into the polycrystalline layer, wherein the electrostatic discharge protection circuit comprises the at least one transistor.