The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Dec. 06, 2012
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Sang Heon Han, Gyeonggi-do, KR;
Jeong Wook Lee, Gyeonggi-do, KR;
Jae Sung Hyun, Seoul, KR;
Jin Young Lim, Gyeonggi-do, KR;
Dong Joon Kim, Gyeonggi-do, KR;
Young Sun Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlInGaN (0≦x<1, 0<y≦1) and each of the plurality of quantum well layers contains a different indium (In) content. And, among the plurality of quantum barrier layers, a quantum barrier layer adjacent to a quantum well layer having a higher indium (In) content is thicker than a quantum barrier layer adjacent to a quantum well layer having a lower indium (In) content.