The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Dec. 20, 2010
Applicant:
Shigeto Oshino, Kanagawa-ken, JP;
Inventor:
Shigeto Oshino, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to one embodiment, a nonvolatile memory device includes a lower electrode layer, a nanomaterial assembly layer, and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of micro conductive bodies assembled via a gap. The upper electrode layer is provided on the nanomaterial assembly layer. The portion of the micro conductive bodies is buried at least in a lower part of the upper electrode layer.
Oshino, Shigeto. (2014). Nonvolatile memory device and method for manufacturing the same (U.S. Patent No. 8716691). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8716691
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile