The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Apr. 05, 2012
Yasushi Noguchi, Nagoya, JP;
Atsushi Kaneda, Ichinomiya, JP;
Mariko Kakitani, Kouza-Gun, JP;
Yoshimasa Omiya, Nagoya, JP;
Yasushi Noguchi, Nagoya, JP;
Atsushi Kaneda, Ichinomiya, JP;
Mariko Kakitani, Kouza-Gun, JP;
Yoshimasa Omiya, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A honeycomb structure includes: a honeycomb structural portion having porous partition walls functioning as fluid passages and separating and forming a plurality of cells extending from one end face to the other end face. The partition walls and the outer peripheral wall contain silicon carbide particles as a framework and silicon as a binder for binding the silicon carbide particles. The honeycomb structure has a partition walls thickness of 50 to 200 μm, a cell density of 40 to 150 cells/cm, and an average particle diameter of the silicon carbide as a framework of 3 to 40 μm. The honeycomb structural portion has a volume resistivity of 1 to 40 Ωcm at 400° C., and the volume resistivity of the electrode portion at 400° C. is not more than 40% of the volume resistivity of the honeycomb structural portion at 400° C.