The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Apr. 11, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Zhiguo Sun, Halfmoon, NY (US);
Songkram Srivathanakul, Waterford, NY (US);
Huang Liu, Mechanicville, NY (US);
Hung-Wei Liu, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a semiconductor device are provided. The methods include, for example, forming a low-k dielectric having a continuous planar surface, and, after forming the low-k dielectric, subjecting the continuous planar surface of the low-k dielectric to an ethylene plasma enhanced chemical vapor deposition (PECVD) treatment.
Sun, Zhiguo. (2014). Method of forming a low-k dielectric film (U.S. Patent No. 8716150). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8716150
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile