The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Aug. 30, 2012
Applicant:
Takayuki Sakai, Ishikawa-ken, JP;
Inventor:
Takayuki Sakai, Ishikawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to an embodiment, a method for etching polycrystalline silicon includes a step of holding the polycrystalline silicon at a temperature higher than or equal to T(K) given in a following equation; and a step of etching the polycrystalline silicon by dry etching with an etching gas containing CFand O, where d (nm) is etching amount of the polycrystalline silicon, r (nm) is surface roughness of the polycrystalline silicon after the etching, x is ratio of flow rate of CFgas to sum of flow rate of the CFgas and flow rate of Ogas, and k (eV/K) is Boltzmann constant.