The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

May. 13, 2011
Applicants:

Myeongcheol Kim, Suwon-si, KR;

Sooyeon Jeong, Bucheon-si, KR;

Joon Goo Hong, Daegu, KR;

Dohyoung Kim, Hwaseong-si, KR;

Yongjin Kim, Suwon-si, KR;

Jin Wook Lee, Seoul, KR;

Yoonhae Kim, Yongin-si, KR;

Inventors:

Myeongcheol Kim, Suwon-si, KR;

Sooyeon Jeong, Bucheon-si, KR;

Joon Goo Hong, Daegu, KR;

Dohyoung Kim, Hwaseong-si, KR;

Yongjin Kim, Suwon-si, KR;

Jin Wook Lee, Seoul, KR;

Yoonhae Kim, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.


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