The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Mar. 23, 2012
Jin-bum Kim, Seoul, KR;
Kwan-heum Lee, Gyeonggi-do, KR;
Seung-hun Lee, Seoul, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
Sun-ghil Lee, Gyeonggi-do, KR;
Jin-Bum Kim, Seoul, KR;
Kwan-Heum Lee, Gyeonggi-do, KR;
Seung-Hun Lee, Seoul, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
Sun-Ghil Lee, Gyeonggi-do, KR;
Abstract
A semiconductor device can include a first gate electrode including a gate insulating pattern, a gate conductive pattern and a capping pattern that are sequentially stacked on a semiconductor substrate, and a first spacer of a low dielectric constant disposed on a lower sidewall of the first gate electrode. A second spacer of a high dielectric constant, that is greater than the low dielectric constant, is disposed on an upper sidewall of the first gate electrode above the first spacer.