The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jul. 29, 2013
Nissan Motor Co., Ltd., Kanagawa, JP;
Rohm Co., Ltd., Kyoto, JP;
Satoshi Tanimoto, Yokohama, JP;
Noriaki Kawamoto, Kyoto, JP;
Takayuki Kitou, Kameoka, JP;
Mineo Miura, Kyoto, JP;
Nissan Motor Co., Ltd., Kanagawa-Ken, JP;
Rohm Co., Ltd., Kyoto-Fu, JP;
Abstract
A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().