The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jan. 05, 2011
Jae-gil Lee, Gyeonggi-do, KR;
Chang-wook Kim, Gyeonggi-do, KR;
Ho-cheol Jang, Gyeonggi-do, KR;
Chong-man Yun, Seoul, KR;
Jae-gil Lee, Gyeonggi-do, KR;
Chang-wook Kim, Gyeonggi-do, KR;
Ho-cheol Jang, Gyeonggi-do, KR;
Chong-man Yun, Seoul, KR;
Fairchild Korea Semiconductor, Ltd., Bucheon, Kyonggi Province, KR;
Abstract
A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.