The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Dec. 20, 2012
Applicant:
The Hong Kong University of Science and Technology, Clear Water Bay, HK;
Assignee:
The Hong Kong University of Science and Technology, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.