The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

May. 06, 2010
Applicants:

Gyu Beom Kim, Ansan-si, KR;

Sang Joon Lee, Ansan-si, KR;

Chang Suk Han, Ansan-si, KR;

Kwang Choong Kim, Ansan-si, KR;

Inventors:

Gyu Beom Kim, Ansan-si, KR;

Sang Joon Lee, Ansan-si, KR;

Chang Suk Han, Ansan-si, KR;

Kwang Choong Kim, Ansan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.


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