The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Aug. 31, 2009
Koichi Goshonoo, Aichi-ken, JP;
Miki Moriyama, Aichi-ken, JP;
Taro Hitosugi, Aichi-ken, JP;
Tetsuya Hasegawa, Aichi-ken, JP;
Junpei Kasai, Aichi-ken, JP;
Koichi Goshonoo, Aichi-ken, JP;
Miki Moriyama, Aichi-ken, JP;
Taro Hitosugi, Aichi-ken, JP;
Tetsuya Hasegawa, Aichi-ken, JP;
Junpei Kasai, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Kanagawa Academy of Science and Technology, Kawasaki-Shi, Kanagawa, JP;
Abstract
When a p-layercomposed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layeris in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.