The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Sep. 08, 2006
Applicants:
Munehiro Tada, Tokyo, JP;
Naoya Furutake, Tokyo, JP;
Tsuneo Takeuchi, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Inventors:
Munehiro Tada, Tokyo, JP;
Naoya Furutake, Tokyo, JP;
Tsuneo Takeuchi, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.