The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jun. 16, 2010
Yuichi Oshima, Tsuchiura, JP;
Yuichi Oshima, Tsuchiura, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
The invention provides a method for manufacturing a Group III nitride semiconductor crystal. The method includes the steps of preparing a seed crystal and performing a convex surface-growing step to grow the group III nitride semiconductor crystal. The growth surface of the group III nitride semiconductor crystal is constituted only by a plurality of surfaces not vertical to a growth direction and the group III nitride semiconductor crystal grows while forming a convex shape as a whole by the growth surface constituted of the plurality of surfaces. The invention also provides a method for manufacturing a group III nitride semiconductor substrate.