The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jan. 28, 2009
Adrian Stefan Avramescu, Regensburg, DE;
Christoph Eichler, Tegernheim, DE;
Uwe Strauss, Bad Abbach, DE;
Volker Haerle, Laaber, DE;
Adrian Stefan Avramescu, Regensburg, DE;
Christoph Eichler, Tegernheim, DE;
Uwe Strauss, Bad Abbach, DE;
Volker Haerle, Laaber, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising AlGa, where 0<x<0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al(InGa)N or InGaN, where 0<x<0.99 and 0≦y≦1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon.