The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Oct. 04, 2011
Applicants:

Mathias M. Schubert, Lincoln, NE (US);

Tino Hofmann, Lincoln, NE (US);

Venkata Rao Voora, Lincoln, NE (US);

Inventors:

Mathias M. Schubert, Lincoln, NE (US);

Tino Hofmann, Lincoln, NE (US);

Venkata Rao Voora, Lincoln, NE (US);

Assignee:

NUtech Ventures, Lincoln, NE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device is provided. The memory device includes a plurality of memory cells and a controller to write data to and read data from the memory cells. Each memory cell includes a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials. The memory device can be configured to store energy that can be released by applying a voltage pulse to the memory device.


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