The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jun. 21, 2006
Stefan Scotzniovsky, Santa Clara, CA (US);
Bruce Cory, Aptos, CA (US);
Charles Chew-yuen Young, Cupertino, CA (US);
Anthony M. Tamasi, Los Gatos, CA (US);
James M. Van Dyke, Austin, TX (US);
John S. Montrym, Los Altos Hills, CA (US);
Sean J. Treicher, Sunnyvale, CA (US);
Stefan Scotzniovsky, Santa Clara, CA (US);
Bruce Cory, Aptos, CA (US);
Charles Chew-Yuen Young, Cupertino, CA (US);
Anthony M. Tamasi, Los Gatos, CA (US);
James M. Van Dyke, Austin, TX (US);
John S. Montrym, Los Altos Hills, CA (US);
Sean J. Treicher, Sunnyvale, CA (US);
Nvidia Corporation, Santa Clara, CA (US);
Abstract
A memory cell reconfiguration process is performed in accordance with the operational characteristic settings determined based upon the results of analysis and/or testing of memory cell operations. The memory circuit can include a plurality of memory cells and memory cell configuration controller. The memory cells store information associated with a variety of operations. The memory cell configuration controller coordinates selective enablement and disablement of each of the plurality of memory cells, which can be done on a subset or group basis (e.g., enables and/or disables memory cells on a word length or row by row basis). The address mapping can be adjusted so that the memory space appears continuous to external components. The memory cell configuration controller can also forward configuration information to upstream and/or downstream components that can adjust operations to compensate for the memory cell configuration (e.g., to prevent overflow).