The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Oct. 09, 2013
Electronics and Telecommunications Research Institute, Daejeon, KR;
Sang Hee Park, Daejeon, KR;
Chi Sun Hwang, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Him Chan Oh, Seoul, KR;
Kee Chan Park, Gyeonggi-do, KR;
Tao Ren, Seoul, KR;
Hong Kyun Leem, Seoul, KR;
Min Woo Oh, Seoul, KR;
Ji Sun Kim, Gyeonggi-do, KR;
Jae Eun Pi, Gyeonggi-do, KR;
Byeong Hoon Kim, Gyeonggi-do, KR;
Byoung Gon Yu, Daejeon, KR;
Electronics and Telecomunications Research Institute, Daejeon, KR;
Konkuk University Industrial Cooperation Corp., Seoul, KR;
Abstract
Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.