The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jul. 05, 2012
Masayuki Katagiri, Kanagawa, JP;
Yuichi Yamazaki, Tokyo, JP;
Makoto Wada, Kanagawa, JP;
Tadashi Sakai, Kanagawa, JP;
Naoshi Sakuma, Kanagawa, JP;
Mariko Suzuki, Kanagawa, JP;
Masayuki Katagiri, Kanagawa, JP;
Yuichi Yamazaki, Tokyo, JP;
Makoto Wada, Kanagawa, JP;
Tadashi Sakai, Kanagawa, JP;
Naoshi Sakuma, Kanagawa, JP;
Mariko Suzuki, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.