The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jan. 31, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Andreas Meiser, Sauerlach, DE;
Werner Schwetlick, Groebenzell, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11536 (2013.01); H01L 29/42328 (2013.01);
Abstract
A semiconductor device is formed in a semiconductor substrate comprising a first main surface and includes a control gate disposed in a lower portion of a first trench formed in the first main surface, a floating gate disposed in the first trench above the control gate and insulated from the control gate, a source region of a first conductivity type, a body region of a second conductivity type, and a drain region of the first conductivity type.