The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Jan. 07, 2012
Applicant:

Chih-feng Huang, Jhubei, TW;

Inventor:

Chih-Feng Huang, Jhubei, TW;

Assignee:

Richtek Technology Corporation, Chupei, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses an isolated SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a first high density doped region located in the first well and having a second conductivity type; a second well nearby the first well and having the second conductivity type; a second high density doped region located in the second well and having the second conductivity type; and a third high density doped region located in the second well and having the first conductivity type, wherein the first high density doped region is for electrical connection with a pad, and wherein the first well is not provided with a high density doped region having the first conductivity type for connection with the pad.


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