The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Sep. 30, 2010
Romain Gwoziecki, Foulain, FR;
Mohamed Benwadih, Champigny-sur-Marne, FR;
Philippe Coronel, Barraux, FR;
Stéphanie Jacob, Saint Siméon de Bressieux, FR;
Romain Gwoziecki, Foulain, FR;
Mohamed Benwadih, Champigny-sur-Marne, FR;
Philippe Coronel, Barraux, FR;
Stéphanie Jacob, Saint Siméon de Bressieux, FR;
Abstract
The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.