The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Nov. 26, 2009
Applicants:

Tomoyuki Takada, Tsukuba, JP;

Masahiko Hata, Tsuchiura, JP;

Hisashi Yamada, Tsukuba, JP;

Inventors:

Tomoyuki Takada, Tsukuba, JP;

Masahiko Hata, Tsuchiura, JP;

Hisashi Yamada, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/336 (2006.01); H01L 21/46 (2006.01); H01L 21/78 (2006.01); H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.


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