The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Mar. 01, 2011
Sung-shan Tai, San Jose, CA (US);
Hung-sheng Tsai, Tainan, TW;
Sung-Shan Tai, San Jose, CA (US);
Hung-Sheng Tsai, Tainan, TW;
Sinopower Semiconductor Inc., Hsinchu Science Park, Hsinchu, TW;
Abstract
The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole.