The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Sep. 20, 2007
Applicants:

Yuji Komatsu, Alkmaar, NL;

Lambert Johan Geerligs, Alkmaar, NL;

Valentin Dan Mihailetchi, Groningen, NL;

Inventors:

Yuji Komatsu, Alkmaar, NL;

Lambert Johan Geerligs, Alkmaar, NL;

Valentin Dan Mihailetchi, Groningen, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.


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