The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8707001 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 22, 2014

Filed:

Dec. 04, 2008
Applicants:

Nan Chen, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Varun Verma, San Diego, CA (US);

Inventors:

Nan Chen, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Varun Verma, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and systems for determining a memory access time are provided. A first phase skew is measured between a first clock signal used by a memory and a second clock signal used as a reference clock signal. Then, a second phase skew is measured between a delayed version of the first clock signal output by the memory when the memory completes a given read operation and the second clock signal. The memory access time is determined based on the first and second phase skews.


Find Patent Forward Citations

Chen, Nan. (2014). Method and system for measuring memory access time using phase detector (U.S. Patent No. 8707001). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8707001

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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