The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Aug. 30, 2012
Applicants:

Hyun-seok Kim, Goyang-Si, KR;

Sung-bin Kim, Seoul, KR;

Sung-hwan Bae, Seoul, KR;

Jong-nam Baek, Hwaseong-Si, KR;

Sang-hoon Lee, Yongin-Si, KR;

Inventors:

Hyun-Seok Kim, Goyang-Si, KR;

Sung-Bin Kim, Seoul, KR;

Sung-Hwan Bae, Seoul, KR;

Jong-Nam Baek, Hwaseong-Si, KR;

Sang-Hoon Lee, Yongin-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/04 (2013.01); G11C 2211/5646 (2013.01);
Abstract

A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.


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