The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jan. 18, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chan Hee Jeon, Hwaseong-si, KR;
Doo Hyung Kim, Suwon-si, KR;
Han Gu Kim, Seongnam-si, KR;
Woo Jin Seo, Seongnam-si, KR;
Ki Tae Lee, Seongnam-si, KR;
Hong Wook Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
An electrostatic discharge (ESD) protection circuit includes a first power line; a second power line; a ground line; two stack transistors connected in series between the first power line and the ground line; a first resistor connected between the first power line and a first node; a first transistor and a capacitor connected in series between the first node and the ground line; a second transistor connected between the second power line and a second node; a third transistor connected between the first power line and a third node; an inverter, connected between the third node and the ground line, and having an input connected to the second node; a fourth transistor, connected to the first power line, and having a gate connected to the second node; and a fifth transistor, connected between the second power line and the third node, and having a gate connected to a terminal of the fourth transistor.