The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Dec. 15, 2010
Applicants:

Sang Wook Nam, Seoul, KR;

Yong Hoon Song, Seoul, KR;

Sung Ho Lee, Seoul, KR;

Jae Jun Lee, Gyeonggi-do, KR;

Eun Ii Cho, Seoul, KR;

Inventors:

Sang Wook Nam, Seoul, KR;

Yong Hoon Song, Seoul, KR;

Sung Ho Lee, Seoul, KR;

Jae Jun Lee, Gyeonggi-do, KR;

Eun II Cho, Seoul, KR;

Assignee:

SNU R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention includes a class-E power amplifier, comprising a driver stage (DS) including a first power amplifier with transistors, to which an input signal is inputted; a main stage (MS), including a second power amplifier with transistors, whose input is connected to the output of the DS; and a first LC resonator whose one end is connected to the output of the DS and the other end to the ground as an AC equivalent circuit and a second LC resonator whose one end is connected to the input of the MS and the other end to the ground as an AC equivalent circuit. In accordance with the present invention, as the voltage stress is reduced on the CMOS class-E power amplifier, the application of the high power supply voltage may be allowed and therefore the load impedance may be high while the same efficiency is maintained.


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