The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Mar. 27, 2009
Applicant:

Norio Masuda, Tokyo, JP;

Inventor:

Norio Masuda, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 29/26 (2006.01); G01R 33/02 (2006.01); G01R 27/28 (2006.01); H02H 9/00 (2006.01); H01L 29/40 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a shield-structured loop element which can suppress noise via a silicon substrate and can be manufactured by a semiconductor process. The loop element includes: a first well of a first polarity that is formed on a substrate; a deep well of a second polarity that is formed below the first well; a ring-shaped second well of a second polarity that is formed on the deep well along an outer periphery of the deep well; a third well of the first polarity that is formed in an island area surrounded by the deep well and the second well; a looped conductor that is formed in a layer above the third well and has smaller outer dimensions than those of the third well; and a first path that connects the second well to a bias power supply. The second well and the deep well are electrically connected to each other.


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