The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Mar. 30, 2011
Tony Vanhoucke, Bierbeek, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Hans Mertens, Leuven, NL;
Philippe Meunier-beillard, Kortenberg, BE;
Tony Vanhoucke, Bierbeek, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Hans Mertens, Leuven, NL;
Philippe Meunier-Beillard, Kortenberg, BE;
NXP, B.V., Eindhoven, NL;
Abstract
A bipolar transistor is fabricated having a collector () in a substrate () and a base () and an emitter () formed over the substrate. The base has a stack region () which is laterally separated from the emitter () by an electrically insulating spacer (). The insulating spacer () has a width dimension at its top end at least as large as the width dimension at its bottom end and forms a Γ-shape or an oblique shape. The profile reduces the risk of silicide bridging at the top of the spacer in subsequent processing, while maintaining the width of emitter window.