The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Oct. 08, 2004
Applicants:

Jae-bon Koo, Yongin-si, KR;

Byoung-deog Choi, Seoul, KR;

Myeong-seob SO, Cheonan-si, KR;

Won-sik Kim, Seoul, KR;

Inventors:

Jae-Bon Koo, Yongin-si, KR;

Byoung-Deog Choi, Seoul, KR;

Myeong-Seob So, Cheonan-si, KR;

Won-Sik Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.


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