The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Apr. 12, 2012
Hao-lin Chiu, Taipei, TW;
Chi-jui Lin, Hualien County, TW;
Shu-wei Tsao, Taipei, TW;
Chun-nan Lin, Changhua County, TW;
Po-liang Yeh, New Taipei, TW;
Shine-kai Tseng, Taoyuan County, TW;
Hao-Lin Chiu, Taipei, TW;
Chi-Jui Lin, Hualien County, TW;
Shu-Wei Tsao, Taipei, TW;
Chun-Nan Lin, Changhua County, TW;
Po-Liang Yeh, New Taipei, TW;
Shine-Kai Tseng, Taoyuan County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.