The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Sep. 22, 2011
Kwong-kit Choi, Brookeville, MD (US);
Kwong-Kit Choi, Brookeville, MD (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
An infrared photodetector comprising: a thin contact layer substantially transparent to infrared light; an absorption layer positioned such that light admitted through the substantially transparent thin contact area passes through the absorption layer; the absorption layer being configured to utilize resonance to increase absorption efficiency; at least one reflective side wall adjacent to the absorption layer being substantially non-parallel to the incident light operating to reflect light into the absorption layer for absorption of infrared radiation; and a top contact layer positioned adjacent to the active layer. A method of designing a photodetector comprising selecting a type of material based upon the wavelength range to be detected; determining a configuration geometry; calculating the electromagnetic field distributions using a computer simulated design of the configuration geometry, and determining a quantum efficiency spectrum at the desired wavelength or wavelength range; whereby the effectiveness of the photodetector is simulated prior to fabrication.