The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2014

Filed:

Aug. 13, 2007
Applicants:

Koichi Nishikawa, Nagoya, JP;

Masaaki Shimizu, Iruma, JP;

Kenichi Nonaka, Tokyo, JP;

Seiichi Yokoyama, Tokorozawa, JP;

Hideki Hashimoto, Kawagoe, JP;

Inventors:

Koichi Nishikawa, Nagoya, JP;

Masaaki Shimizu, Iruma, JP;

Kenichi Nonaka, Tokyo, JP;

Seiichi Yokoyama, Tokorozawa, JP;

Hideki Hashimoto, Kawagoe, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.


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