The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Feb. 01, 2012
Tomoyuki Kirimura, Yokohama, JP;
Tomoyuki Kirimura, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
When a wiring structure is formed by a trench-first dual damascene method, a first hard mask for forming via holes and a second hard mask for forming wiring trenches are sequentially formed on an interlayer insulating film, openings are formed at the first hard mask while using the second hard mask as a mask, and thereafter, the openings are expanded in a lateral direction by an isotropic etching to form openings, via holes are formed by etching the interlayer insulating film while using the first hard mask and the second hard mask as masks, and wiring trenches communicating with the via holes are formed by etching the interlayer insulating film while using the second hard mask as a mask.