The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Feb. 24, 2011
Qingqing Liang, Beijing, CN;
Zhi Jin, Beijing, CN;
Wenwu Wang, Beijing, CN;
Huicai Zhong, Beijing, CN;
Xinyu Liu, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, Beijing, CN;
Zhi Jin, Beijing, CN;
Wenwu Wang, Beijing, CN;
Huicai Zhong, Beijing, CN;
Xinyu Liu, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Abstract
The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer; semiconductor doped regions formed in the two opposite sides of the gate region and in contact with the graphene layer, wherein the semiconductor doped regions are isolated from the gate region; a contact formed on the gate region and contacts formed on the semiconductor doped regions. The on-off ratio of the graphene device is increased through the semiconductor doped regions without increasing the band gap of the graphene material, i.e., without affecting the mobility of the material or the speed of the device, thereby increasing the applicability of the graphene material in CMOS devices.