The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Oct. 24, 2011
Applicants:
Atsushi Taya, Kariya, JP;
Katsuhiko Kanamori, Nukata-gun, JP;
Masashi Totokawa, Nagoya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate.