The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Sep. 18, 2012
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); H01L 31/036 (2006.01); H01B 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Affords AlGaN crystal growth methods, as well as AlGaN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlGaN crystal (0<x≦1) growth method is a method of growing, by a vapor-phase technique, an AlGaN crystal (), characterized by forming, in the growing of the crystal, at least one pit () having a plurality of facets () on the major growth plane () of the AlGaN crystal (), and growing the AlGaN crystal () with the at least one pit () being present, to reduce dislocations in the AlGaN crystal ().