The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8701998 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 22, 2014

Filed:

Jun. 04, 2008
Applicants:

Frank Vollmer, Cambridge, MA (US);

Juraj Topolancik, Malden, MA (US);

Inventors:

Frank Vollmer, Cambridge, MA (US);

Juraj Topolancik, Malden, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06K 7/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

Periodic high-index-contrast photonic crystal (PhC) structures such as two-dimensional arrays of air holes in dielectric slabs inhibit light propagation in bands of frequencies and confine light in dislocations where the lattice periodicity is broken. The present invention is a conceptually different approach to photon localization in PhC structures. The disclosed design concept introduces structural perturbations uniformly throughout the fabricated crystal by deliberately changing the shape or orientations of elements that form the lattice. Optimized introduction of such random structural perturbations produces optical nanocavities with ultra-small modal volumes and high quality (Q) factors of over 250,000. Applications of such disordered photonic crystal structures are disclosed for optical sensing systems and random nano-lasers.


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Vollmer, Frank. (2014). System and method for strong photon localization by disordered photonic crystal structures (U.S. Patent No. 8701998). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8701998

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