The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Oct. 11, 2011
Applicants:
Takao Watanabe, Fuchu, JP;
Satoru Hanzawa, Hachioji, JP;
Yoshitaka Sasago, Tachikawa, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
Adverse effects of a parasitic resistance and a parasitic capacitance of a driver circuit to a memory cell causes problems of thermal disturbance to a not-selected cell, unevenness of application voltage, degradation of a memory element in reading. A capacitor (C) is provided above or beneath a memory cell (MC) that includes a memory element to which a current write memory information and a selection element connected to the memory element. A charge stored in this capacitor writes to the memory element.