The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Apr. 01, 2011
Tony Maindron, Grenoble, FR;
Bernard Aventurier, Saint Joseph de Riviere, FR;
Julia DE Girolamo, La Tronche, FR;
Tony Maindron, Grenoble, FR;
Bernard Aventurier, Saint Joseph de Riviere, FR;
Julia De Girolamo, La Tronche, FR;
Abstract
The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area () covered with a multi-layer encapsulation structure () and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n≧1) comprising an inorganic film F, . . . , Fn and a photosensitive layer C, . . . , Cn, including an internal stack FCin which Fcovers the active area and C, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C, Cn is etched and covers the film F, . . . , Fn by extending around a peripheral edge () of the active area in at least one structured surrounding portion () ending beyond the adjacent connection area, and if n>2, the or each layer C, . . . , Cn surrounds the layer C, . . . , Cn−1 of the immediately underlying stack, such that the layer or each layer C, . . . , Cn passivates the film F, Fn and laterally protects the underlying active area from the developing solutions and solvents used for etching said layer C, . . . , Cn.