The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Nov. 18, 2008
Takuji Okahisa, Itami, JP;
Tomohiro Kawase, Itami, JP;
Tomoki Uemura, Itami, JP;
Muneyuki Nishioka, Itami, JP;
Satoshi Arakawa, Itami, JP;
Takuji Okahisa, Itami, JP;
Tomohiro Kawase, Itami, JP;
Tomoki Uemura, Itami, JP;
Muneyuki Nishioka, Itami, JP;
Satoshi Arakawa, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.