The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Sep. 20, 2010
Takeshi Araki, Tokyo, JP;
Takeshi Yamaguchi, Kanagawa-ken, JP;
Mariko Hayashi, Tokyo, JP;
Kohichi Kubo, Kanagawa-ken, JP;
Takayuki Tsukamoto, Kanagawa-ken, JP;
Takeshi Araki, Tokyo, JP;
Takeshi Yamaguchi, Kanagawa-ken, JP;
Mariko Hayashi, Tokyo, JP;
Kohichi Kubo, Kanagawa-ken, JP;
Takayuki Tsukamoto, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.