The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2014

Filed:

Jul. 31, 2009
Applicants:

Faquir C. Jain, Storrs, CT (US);

Fotios Papadimitrakopoulos, West Hartford, CT (US);

Inventors:

Faquir C. Jain, Storrs, CT (US);

Fotios Papadimitrakopoulos, West Hartford, CT (US);

Assignee:

University of Connecticut, Farmington, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene.


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