The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Nov. 07, 2011
Kiyeon Park, Hwaseong-si, KR;
Insang Jeon, Seoul, KR;
Hanjin Lim, Seoul, KR;
Yeongcheol Lee, Seoul, KR;
Jun-noh Lee, Hwaseong-si, KR;
Kiyeon Park, Hwaseong-si, KR;
Insang Jeon, Seoul, KR;
Hanjin Lim, Seoul, KR;
Yeongcheol Lee, Seoul, KR;
Jun-Noh Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.