The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Mar. 01, 2011
Ming-jeng Huang, Hsinchu, TW;
Han-tu Lin, Hsinchu, TW;
Ming-Jeng Huang, Hsinchu, TW;
Han-Tu Lin, Hsinchu, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.