The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Dec. 20, 2012
SK Hynix Inc., Icheon-si, KR;
Young Man Cho, Icheon-si, KR;
SK Hynix Inc., Icheon, KR;
Abstract
A method for forming a semiconductor device is disclosed. In the semiconductor device, a gate is formed to enclose a fin structure in a 6Fsaddle fin gate structure transistor, so that the size of a channel region increases. In accordance with an aspect of the present invention, a method for forming a semiconductor device includes: defining an active region by forming a device isolation film over a semiconductor substrate; forming a first recess extending to a first level in the active region; forming a sacrificial film at a lower portion of the first recess; forming a fin structure over the sacrificial film; separating the fin structure from the semiconductor substrate in the active region by removing the sacrificial film and forming a hole between the fin structure and the active region; and forming a gate to enclose the fin structure.